ZXTNS618MCTA Datasheet | Diodes Incorporated

Features and Benefits NPN Transistor - BVCEO > 20V - IC = 4.5A Continuous Collector Current - Low Saturation Voltage (150m V max @ 1A) - RSAT = 47mΩ for a low equivalent On-Resistance - h FE characterized up to 6A for high current gain hold up Schottky Diode - BVR > 40V - IFAV = 3A Average Peak Forward Current - Low VF < 500m V (@1A) for reduced power loss - Fast switching due to Schottky barrier Low profile 0.8mm high package for thin applications RθJA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, Ro HS pliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE BINATION Mechanical Data - Case: DFN3020B-8 - Case Material: Molded Plastic, “Green” Molding ponent - Terminals: Pre-Plated Ni Pd Au leadframe - Nominal package height: 0.8mm - UL Flammability Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Weight: 0.013 grams (approximate) Applications - DC - DC Converters - Charging circuits - Mobile phones - Motor...