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ZXTNS618MCTA Datasheet 20v NPN Low Saturation Transistor And 1a Schottky Diode Combination

Manufacturer: Diodes Incorporated

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • NPN Transistor.
  • BVCEO > 20V.
  • IC = 4.5A Continuous Collector Current.
  • Low Saturation Voltage (150mV max @ 1A).
  • RSAT = 47mΩ for a low equivalent On-Resistance.
  • hFE characterized up to 6A for high current gain hold up Schottky Diode.
  • BVR > 40V.
  • IFAV = 3A Average Peak Forward Current.
  • Low VF < 500mV (@1A) for reduced power loss.
  • Fast switching due to Schottky barrier Low profile 0.8mm high package for thin.

More Datasheets from Diodes Incorporated

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