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Features and Benefits
NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47mΩ for a low equivalent On-Resistance • hFE characterized up to 6A for high current gain hold up
Schottky Diode • BVR > 40V • IFAV = 3A Average Peak Forward Current • Low VF < 500mV (@1A) for reduced power loss • Fast switching due to Schottky barrier
Low profile 0.8mm high package for thin applications RθJA efficient, 40% lower than SOT26 6mm2 footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free.
ZXTNS618MCTA Datasheet
