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ZXTPS718MCTA - 20V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION

Download the ZXTPS718MCTA datasheet PDF (ZXTPS718MC included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 20v pnp low saturation transistor and 1a schottky diode combination.

Features

  • PNP Transistor.
  • BVCEO > -20V.
  • IC = -3.5A Continuous Collector Current.
  • Low Saturation Voltage (-220mV max @ -1A).
  • RSAT = 64mΩ for a low equivalent On-Resistance.
  • hFE characterized up to -6A for high current gain hold up Schottky Diode.
  • BVR > 40V.
  • IFAV = 3A Average Peak Forward Current.
  • Low VF < 500mV (@1A) for reduced power loss.
  • Fast switching due to Schottky barrier.
  • Low profile 0.8mm high package for thi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ZXTPS718MC-Diodes.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Features and Benefits PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 64mΩ for a low equivalent On-Resistance • hFE characterized up to -6A for high current gain hold up Schottky Diode • BVR > 40V • IFAV = 3A Average Peak Forward Current • Low VF < 500mV (@1A) for reduced power loss • Fast switching due to Schottky barrier • Low profile 0.8mm high package for thin applications • RθJA efficient, 40% lower than SOT26 • 6mm2 footprint, 50% smaller than TSOP6 and SOT26 • Lead-Free, RoHS Compliant (Note 1) • Halogen and Antimony Free.
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