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ZXTPS720MC - 40V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION

Features

  • PNP Transistor.
  • BVCEO > -40V.
  • IC = -3A Continuous Collector Current.
  • Low Saturation Voltage (-220mV max @ -1A).
  • RSAT = 104mΩ for a low equivalent On-Resistance.
  • hFE characterized up to -3A for high current gain hold up Schottky Diode.
  • BVR > 40V.
  • IFAV = 3A Average Peak Forward Current.
  • Low VF < 500mV (@1A) for reduced power loss.
  • Fast switching due to Schottky barrier.
  • Low profile 0.8mm high package for thin.

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Full PDF Text Transcription

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Features and Benefits PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104mΩ for a low equivalent On-Resistance • hFE characterized up to -3A for high current gain hold up Schottky Diode • BVR > 40V • IFAV = 3A Average Peak Forward Current • Low VF < 500mV (@1A) for reduced power loss • Fast switching due to Schottky barrier • Low profile 0.8mm high package for thin applications • RθJA efficient, 40% lower than SOT26 • 6mm2 footprint, 50% smaller than TSOP6 and SOT26 • Lead-Free, RoHS Compliant (Note 1) • Halogen and Antimony Free.
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