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Diodes Semiconductor Electronic Components Datasheet

BSS84 Datasheet

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-50V
RDS(on) max
10@ VGS = -5V
ID
TA = +25°C
-130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
SOT23
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish (Lead Free Plating) Solderable per
MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
D
Gate
Source
GS
Top View
Equivalent Circuit
Top View
Ordering Information (Note 4)
Notes:
Part Number
BSS84-7-F
BSS84Q-7-F
BSS84-13-F
BSS84Q-13-F
Qualification
Commercial
Automotive
Commercial
Automotive
Case
SOT23
SOT23
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
K84 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code
J
K
L
MN
P
R…
Y
Z
A
B
C
D
E
Month
Code
Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
1 2 3 4 5 6 78 9OND
BSS84
Document number: DS30149 Rev. 20 - 2
1 of 5
www.diodes.com
August 2013
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

BSS84 Datasheet

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS 20K
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Continuous
Continuous
Symbol
VDSS
VDGR
VGSS
ID
IDM
Value
-50
-50
20
-130
-1.2
BSS84
Units
V
V
V
mA
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
300
417
-55 to +150
Units
mW
C/W
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS
IDSS
IGSS
-50

  V VGS = 0V, ID = -250µA
-1 µA VDS = -50V, VGS = 0V, TJ = +25°C
-2 µA VDS = -50V, VGS = 0V, TJ = +125°C
-100 nA VDS = -25V, VGS = 0V, TJ = +25°C
 10 nA VGS = 20V, VDS = 0V
VGS(th)
-0.8
-2.0
V VDS = VGS, ID = -1mA
RDS (ON)
10
VGS = -5V, ID = -0.100A
gFS 0.05
S VDS = -25V, ID = -0.1A
Ciss   45 pF
Coss
25
pF VDS = -25V, VGS = 0V, f = 1.0MHz
Crss
12
pF
tD(ON)
10
ns VDD = -30V, ID = -0.27A,
tD(OFF)
18
ns RGEN = 50, VGS = -10V
Notes:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing
BSS84
Document number: DS30149 Rev. 20 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated


Part Number BSS84
Description P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Maker Diodes Incorporated
Total Page 5 Pages
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