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DMN100 - N-Channel MOSFET

Features

  • Extremely Low On-Resistance: 170mW @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) E G D G H D TOP VIEW S B C A SC-59 Dim A B C D E G H K J Drain Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 ¾ 1.00 0.55 0.10 Max 0.50 1.80 3.00 1.05 0.70 2.10 3.

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Datasheet Details

Part number DMN100
Manufacturer Diodes Incorporated
File Size 73.12 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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SPICE MODELS: DMN100 Lead-free Green DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · Extremely Low On-Resistance: 170mW @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3) E G D G H D TOP VIEW S B C A SC-59 Dim A B C D E G H K J Drain Min 0.30 1.40 2.50 0.85 0.30 1.70 2.70 ¾ 1.00 0.55 0.10 Max 0.50 1.80 3.00 1.05 0.70 2.10 3.10 0.10 1.40 0.70 0.35 Mechanical Data · · · · · · · · Case: SC-59 Case Material - Molded Plastic, "Green" Molding Compound.
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