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DMN1008UFDF - 12V N-CHANNEL MOSFET

General Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Key Features

  • 0.6mm Profile.
  • Ideal for Low Profile.

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Full PDF Text Transcription (Reference)

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ADVANCED INFORMATION DMN1008UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) Max 8mΩ @ VGS = 4.5V 12.5mΩ @ VGS = 2.5V ID Max TA = +25°C 12.2A 10.4A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.