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DMN1016UCB6 - N-CHANNEL MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Battery Management Load Switch Battery Protection Mechanical Data

Key Features

  • Low QG & QGD.
  • Small Footprint.
  • Low Profile 0.62mm Height.
  • Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

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DMN1016UCB6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) 20mΩ @ VGS = 4.5V 23mΩ @ VGS = 2.5V ID TA = +25°C 6.6A 6.1A Features and Benefits  Low QG & QGD  Small Footprint  Low Profile 0.62mm Height  Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.