DMN1019UFDE Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMN1019UFDE Key Features
- 0.6mm Profile
- Ideal for Low Profile
DMN1019UFDE Applications
- Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully