DMN1017UCP3 Description
This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by bining low thermal impedance with minimal RDS(ON) per footprint area. Applications DC-DC Converters Battery Management Load Switch DMN1017UCP3 N-CHANNEL ENHANCEMENT MODE MOSFET.
DMN1017UCP3 Key Features
- TR-MOS Technology with the Lowest RDS(ON): RDS(ON) = 14.1mΩ to Minimize On-State Losses
- CSP with Footprint 1.0mm × 1.0mm
- Height = 0.29mm for Low Profile
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive