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DMN1017UCP3 - N-CHANNEL MOSFET

General Description

This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.

Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area.

DC-D

Key Features

  • TR-MOS Technology with the Lowest RDS(ON): RDS(ON) = 14.1mΩ to Minimize On-State Losses.
  • CSP with Footprint 1.0mm × 1.0mm.
  • Height = 0.29mm for Low Profile.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • For automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Summary (Typ. @ VGS = 3.3V, TA = +25°C) VDSS 12V RDS(ON) 14.1mΩ Qg 10.5nC Qgd 4.1nC ID 7.5A Description This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. Applications  DC-DC Converters  Battery Management  Load Switch DMN1017UCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Features  TR-MOS Technology with the Lowest RDS(ON): RDS(ON) = 14.1mΩ to Minimize On-State Losses  CSP with Footprint 1.0mm × 1.0mm  Height = 0.29mm for Low Profile  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.