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DMN1019UVT - 12V N-CHANNEL MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Load Switch DC-DC Converters Power Management Functions Featu

Key Features

  • Low On-Resistance.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
  • Case: TSOT26.
  • Case Material.
  • Molded Plastic. UL Flammability Rating 94V-0.
  • Moisture Sensitivity: Level 1 per J-STD-020.
  • Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 e3.
  • Terminal Connections: See Diagram.
  • Weight: 0.008 grams (Approximate) TSOT26 D1 6D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT DMN1019UVT 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) MAX 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 10.7A 9.8A 9.1A 8.0A 5.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Load Switch  DC-DC Converters  Power Management Functions Features  Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data  Case: TSOT26  Case Material – Molded Plastic.