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DMN601WK
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
2.0Ω @ VGS = 10V 3.0Ω @ VGS = 4.5V
ID Max TA = +25°C
300mA
245mA
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
• Motor controls • Power-management functions • Backlighting
Features and Benefits
• Low On-Resistance: RDS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.