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Diotec Semiconductor

BAS20 Datasheet Preview

BAS20 Datasheet

Surface Mount Silicon Planar Small-Signal Diode

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BAS19 ... BAS21
BAS19 ... BAS21
Fast Switching Surface Mount Si-Planar Diodes
Schnelle Si-Planar-Dioden für die Oberflächenmontage
Version 2015-05-12
Power dissipation – Verlustleistung
2.9 ±0.1
0.4+0.1
-0.05
3
Type
Code
1
1.9±0.1
2
1.1+0.1
-0.2
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions - Maße [mm]
1 = A 2 = n.c./frei 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
120...250 V
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Type
Typ
BAS19
BAS20
BAS21
Continuous reverse voltage
Dauersperrspannung
VR [V]
100
150
200
Grenzwerte (TA = 25°C)
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V] 1)
120
200
250
Power dissipation − Verlustleistung
Max. average forward current (dc)
Dauergrenzstrom
Repetitive peak forward current
Periodischer Spitzenstrom
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
tp ≤ 1 s
tp ≤ 1 µs
Ptot
IFAV
IFRM
IFSM
IFSM
Tj
TS
250 mW 2)
200 mA 1)
625 mA 1)
0.5 A
2.5 A
- 55...+150°C
- 55…+150°C
Characteristics (Tj = 25°C)
Forward voltage
Durchlass-Spannung
Leakage current
Sperrstrom
Tj = 25°C
Tj = 150°C
IF = 100 mA
IF = 200 mA
V = VR
V = VR
Kennwerte (Tj = 25°C)
VF < 1.00 V
VF < 1.25 V
IR < 100 nA
IR < 100 µA
1 Tested with 100 µA pulses – Gemessen mit 100 µA-Impulsen
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1




Diotec Semiconductor

BAS20 Datasheet Preview

BAS20 Datasheet

Surface Mount Silicon Planar Small-Signal Diode

No Preview Available !

Characteristics (Tj = 25°C)
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
Reverse recovery time – Sperrverzug
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
BAS19 ... BAS21
Kennwerte (Tj = 25°C)
CT < 5 pF
trr < 50 ns
RthA < 420 K/W 1)
Pinning – Anschlussbelegung
3
Single Diode
Einzeldiode
12
1 = A 2 = n.c./frei 3 = C
Marking – Stempelung
HB
or
HC
120
[%]
100
80
60
40
20
Ptot
0
0
TA 50
100 150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von der Umgebungstemp.1)
10
[A]
1
10-1
Tj = 125°C
10-2
Tj = 25°C
IF
10-3
0
VF 0.4 0.6 0.8 1.0 [V] 1.4
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/
© Diotec Semiconductor AG


Part Number BAS20
Description Surface Mount Silicon Planar Small-Signal Diode
Maker Diotec Semiconductor
Total Page 2 Pages
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