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Diotec Semiconductor

BCV72 Datasheet Preview

BCV72 Datasheet

Surface mount Si-Epitaxial PlanarTransistors

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BCV 71, BCV 72
General Purpose Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VEB0
Ptot
IC
ICM
Tj
TS
Grenzwerte (TA = 25/C)
BCV 71, BCV 72
60 V
80 V
5V
250 mW 1)
100 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 20 V
IE = 0, VCB = 20 V, Tj = 100/C
Emitter-Base cutoff current – Emitterreststrom
ICB0
ICB0
IC = 0, VEB = 5 V
IEB0
DC current gain – Kollektor-Basis-Stromverhältnis 2)
VCE = 5 V, IC = 10 :A
VCE = 5 V, IC = 2 mA
BCV 71
BCV 72
BCV 71
BCV 72
hFE
hFE
hFE
hFE
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 10 :A
– – 100 nA
– 90 –
– 150 –
110 – 220
200 – 450
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
32 01.11.2003




Diotec Semiconductor

BCV72 Datasheet Preview

BCV72 Datasheet

Surface mount Si-Epitaxial PlanarTransistors

No Preview Available !

General Purpose Transistors
BCV 71, BCV 72
Characteristics (Tj = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 10 mA, IB = 0.5 mA
VCEsat
IC = 50 mA, IB = 5 mA
VCEsat
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
VBEsat
IC = 50 mA, IB = 2.5 mA
VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 2 mA
Gain-Bandwidth Product – Transitfrequenz
VBEon
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
Noise figure – Rauschzahl
CCB0
VCE = 5 V, IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– 120 mV 250 mV
– 210 mV –
– 750 mV –
– 850 mV –
550 mV – 700 mV
100 MHz
– 2.5 pF –
– – 10 dB
RthA 420 K/W 2)
Marking – Stempelung
BCV 71 = K7
BCV 72 = K8
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
33


Part Number BCV72
Description Surface mount Si-Epitaxial PlanarTransistors
Maker Diotec Semiconductor
Total Page 2 Pages
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