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Diotec Semiconductor

BCW29 Datasheet Preview

BCW29 Datasheet

Surface mount Si-Epitaxial PlanarTransistors

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BCW29, BCW30
BCW29, BCW30
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Version 2006-07-28
2.9 ±0.1
0.4 3
Type
Code
1
2
1.1
1.9
Dimensions - Maße [mm]
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCEO
- VCBO
- VEB0
Ptot
- IC
- ICM
- IBM
Tj
TS
Grenzwerte (TA = 25°C)
BCW29
BCW30
32 V
32 V
5V
250 mW 1)
100 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
BCW29
BCW30
hFE
hFE
- VCE = 5 V, - IC = 2 mA
BCW29
BCW30
hFE
hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 50 mA, - IB = 2.5 mA
- VCEsat
- VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– 90 –
– 150 –
120 – 260
215 – 500
– 80 mV 300 mV
– 150 mV –
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1




Diotec Semiconductor

BCW29 Datasheet Preview

BCW29 Datasheet

Surface mount Si-Epitaxial PlanarTransistors

No Preview Available !

BCW29, BCW30
Characteristics (Tj = 25°C)
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 50 mA, - IB = 2.5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- IC = 2 mA, - VCE = 5 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCE = 30 V, Tj = 100°C, (E open)
Emitter-Base cutoff current
- VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 k
f = 1 kHz, Δf = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking - Stempelung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- VBEsat
- VBEsat
720 mV
810 mV
- VBE 600 mV – 750 mV
- ICB0
- ICB0
– 100 nA
– 10 µA
- IEB0
– 100 nA
fT 100 MHz
CCBO – 4.5 pF –
F–
– 10 dB
RthA < 420 K/W 1)
BCW31 ... BCW33
BCW29 = C1
BCW30 = C2
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG


Part Number BCW29
Description Surface mount Si-Epitaxial PlanarTransistors
Maker Diotec Semiconductor
Total Page 2 Pages
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