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BCW29 - SILICON PLANAR EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BCW29, a member of the BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS family.

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Datasheet Details

Part number BCW29
Manufacturer CDIL
File Size 76.04 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BCW29 Datasheet
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  • BCW60C - SILICON PLANAR EPITAXIAL TRANSISTORS
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C –IC = 2 mA; –VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –Ic = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz hFE –VCB0 –VCE0 –ICM Ptot Tj BCW29 > 120 < 260 max. max. max. max, max.
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