ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current IC -100 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -65ᴕ150 * : Package Mounted On 99.9% Alumina 10ᴧ8ᴧ0.6mm. UNIT V V V mA mW ᴱ ᴱ A G H D BCW29/30 EPITAXIAL PLANAR PNP TRANSISTOR E L BL 23 1 PP M 1. EMITTER 2. BASE 3. COLLECTOR DIM A B C D E G H J K L M N P MILLIMETERS 2.93+_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 SOT-23 C N K J Marking C1Type Name Lot No. C2Type Name Lot No. BCW29 BCW30
ELECTRICAL CHARACTERISTICS
(Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
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