NXP Semiconductors BCW29
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BCW29 |
|---|---|
| Datasheet | BCW29 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP general purpose transistors |
| Buy | Stock & Price |
FEATURES
● Low current (max. 100 mA)● Low voltage (max. 32 V).
APPLICATIONS
● General purpose switching and amplification.DESCRIPTION
PNP transistor in a SOT23 plastic package. NPN complements: BCW31 and BCW32. MARKING TYPE NUMBER BCW29 BCW30 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) C1∗ C2∗ Top view handbook, halfpage BCW29; BCW30 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 1 2 1 2 MAM256 Fig.1 Simplified outline SOT23 and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base; IC = −2 mA open collector − − − − − − − −65 − −65 MIN. MAX. −32 −32 −5 −100 −200 −200 250 +150...
