D2P6M
D2P6M is Standard Gate SCR manufactured by DnI.
Features
1.Cathode
Symbol
2. Anode
BVDRM = 600V IT(RMS) = 2.0 A
3.Gate
ITSM = 4 A
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 2.0 A ) On-State Voltage (2.2V(max) @ ITM= 4A) Pb
- Free Packages are Available
TO-126
General Description
Sensitive-gate triggering thyristor is suitable for the application where requiring low gate triggerring current system Used for electric blanket ,electronic jar ,temperature control,lighting control such as a entertainment display. Automatic ignition system , Battery charger .
1 2 3
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC =77 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TC= 77 °C, pulse width TC =77°C,pulse width TC =77 °C, pulse width TC= 77 °C, pulse width 1.0 1.0 1.0 1.0
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 2.0 4 20 1.65 0.5 0.1 0.2 5.0
- 40 ~ 125
- 40 ~ 125
Units
V A A A A 2s W W A V °C °C
April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
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Electrical Characteristics
Symbol Items
VAK = VDRM TC = 25 °C TC = 125 °C ITM = 4 A VAK = 6 V(DC), RL=10 IGT Gate Trigger Current (2) TC = 25 °C 200 tp = 380 10 200 2.2 V ( TC = 25 °C unless otherwise noted )
Conditions
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)
VD =6 V(DC), RL=10 VGT Gate Trigger Voltage (2) TC = 25 °C 1.5 V
VGD dv/dt
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State...
