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* Low RDS(on) (0.009Ω )@VGS=10V Low Gate Charge (Typical 96nC) Low Crss (Typical 215pF) Improved dv/dt Capability 100% Avalanche Tested.

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designe.

DFA06S

DFA01S

DFA02S

DFA04S

DFA08

DFA08S

DFA100BA160

DFA100BA80

DFA100N75

DFA10S

DFA150AA160

DFA150AA80

DFA150BA