WTC6104DNI (WINCOM)
4-channel capacitive inductive touch button chip
WTC6104DNI
http://www.wincomtech.com
WTC6104DNI
(V1.1)
PCB
2-4 （SHIFT）。 3mm×3mm , 30mm×30mm, 0.5mm, ,,. PCB ,,,,, ITO
Published:
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13 views
DFP730 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFP730
N-Channel MOSFET
Features
■ ■ ■ ■ ■
2.Drain
RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capabil
Published:
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11 views
www.DataSheet4U.com
DTP6A60
Triacs / Standard Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 6 A )
Published:
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10 views
DFP2N60 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFP2N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/
Published:
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9 views
DFP740 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFP740
N-Channel MOSFET
Features
RDS(on) (Max 0.55 )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability High ruggedness
Published:
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9 views
DFP634 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFP634
N-Channel MOSFET
Features
RDS(on) (Max 0.45 )@VGS=10V Gate Charge (Typical 26nC) Improved dv/dt Capability High ruggedness
Published:
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9 views
DFP50N06 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFP50N06
N-Channel MOSFET
Features
RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedn
Published:
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9 views
DFP30N06 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFP30N06
N-Channel MOSFET
Features
Low RDS(on) (0.04 )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv
Published:
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9 views
DFB7N60 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFB7N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
N-Channel MOSFET
{
High ruggedness RDS(on) (Max 1.0 Ω )@VGS=10V Gate Charge (Typica
Published:
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8 views
DFF4N60 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFF4N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 60
Published:
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8 views
DFD2N60 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFD2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability
Published:
|
8 views
DFP630 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFP630
N-Channel MOSFET
Features
RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness
Published:
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8 views
DFB30N06 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFB30N06
N-Channel MOSFET
Features
■ ■ ■ ■ ■ ■
Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75p
Published:
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8 views
www.DataSheet4U.com
DBT138-600
Triac / Sensitive Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12
Published:
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8 views
DFP7N60 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFP7N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
N-Channel MOSFET
{
High ruggedness RDS(on) (Max 1.0 Ω )@VGS=10V Gate Charge (Typica
Published:
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7 views
DFP4N60 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFP4N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
N-Channel MOSFET
{
High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typica
Published:
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7 views
DFD1N60 (DnI)
N-Channel MOSFET
www.DataSheet4U.com
DFD2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability
Published:
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7 views
DFP640 (DnI)
N-Channel MOSFET
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DFP640
N-Channel MOSFET
Features
RDS(on) (Max 0.18 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness
Published:
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7 views
D2P4M (DnI)
Standard Gate SCR
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D2P4M
Sensitive Gate Silicon Controlled Rectifiers
Features
1.Cathode
Symbol
2. Anode
BVDRM = 400V IT(RMS) = 2.0 A
3.Gate
ITS
Published:
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7 views
www.DataSheet4U.com
DBT138F-600
UL No. E256958
Triac / Sensitive Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Curre
Published:
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7 views
