DnI Datasheet | Specifications & PDF Download

www.DataSheet4U.com DFP740 N-Channel MOSFET Features RDS(on) (Max 0.55 )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability High ruggedness

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www.DataSheet4U.com DFF4N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 60

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www.DataSheet4U.com DFP2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/

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www.DataSheet4U.com DFP50N06 N-Channel MOSFET Features RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedn

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www.DataSheet4U.com DFF2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability

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www.DataSheet4U.com DFP840 N-Channel MOSFET Features RDS(on) (Max 0.85 )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability High ruggedness

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www.DataSheet4U.com DFP85N06 N-Channel MOSFET Features Low RDS(on) (0.010 )@VGS=10V Low Gate Charge (Typical 96nC) Low Crss (Typical 215pF) Improved

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www.DataSheet4U.com PRILIMINARY DFA100N75 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.013Ω )@VGS=10V Low Gate Charge (Typical 90nC) Low Cr

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www.DataSheet4U.com DFP70N06 N-Channel MOSFET Features Low RDS(on) (0.014 )@VGS=10V Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved

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ISO2-CMOS ST-BUSTM Family MT9173/74 Digital Subscriber Interface Circuit with RxSB Digital Network Interface Circuit with RxSB Data Sheet Features •

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www.DataSheet4U.com DBT138-600 Triac / Sensitive Gate Symbol Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12

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www.DataSheet4U.com DTP6A60 Triacs / Standard Gate Symbol Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 6 A )

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WTC6104DNI http://www.wincomtech.com WTC6104DNI (V1.1) PCB 2-4 （SHIFT）。 3mm×3mm , 30mm×30mm, 0.5mm, ,,. PCB ,,,,, ITO

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www.DataSheet4U.com D2P4M Sensitive Gate Silicon Controlled Rectifiers Features 1.Cathode Symbol 2. Anode BVDRM = 400V IT(RMS) = 2.0 A 3.Gate ITS

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www.DataSheet4U.com DTF12A80 UL No. E256958 Triac / Standard Gate Symbol Features Repetitive Peak Off-State Voltage : 800V R.M.S On-State Current (

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10-Watt Lednium SMD (120° Viewing Angle) OVTL09LG3x Series www.datasheet4u.com • • • • • Revolutionary 3-dimensional packaged LED source Robust ener

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www.DataSheet4U.com ISDN U-BUS/DNIC Input/Output Transformer TEW5318 TEW5318 is designed to interface with the subscriber premises (NT) and the 2-

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www.DataSheet4U.com DFF7N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 1.0 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 60

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www.DataSheet4U.com DFP730 N-Channel MOSFET Features ■ ■ ■ ■ ■ 2.Drain RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capabil

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www.DataSheet4U.com DBT151-600 Standard Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current (

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