DnI Datasheet | Specifications & PDF Download

www.DataSheet4U.com DFB4N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typica

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www.DataSheet4U.com DFB7N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ N-Channel MOSFET { High ruggedness RDS(on) (Max 1.0 Ω )@VGS=10V Gate Charge (Typica

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www.DataSheet4U.com DFP740 N-Channel MOSFET Features RDS(on) (Max 0.55 )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability High ruggedness

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www.DataSheet4U.com DFB30N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75p

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www.DataSheet4U.com DCP20C60 Standard Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( I

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www.DataSheet4U.com D2P4M Sensitive Gate Silicon Controlled Rectifiers Features 1.Cathode Symbol 2. Anode BVDRM = 400V IT(RMS) = 2.0 A 3.Gate ITS

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Cell Type KF-B650 Specifications 650mAh 1.2V Standard 65mA Charging Current Quick 130mA Fast 975mA Standard 14 to 16Hrs. Charging Time Quick 7 to 8Hrs

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ISO2-CMOS ST-BUSTM Family MT9173/74 Digital Subscriber Interface Circuit with RxSB Digital Network Interface Circuit with RxSB Data Sheet Features •

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www.DataSheet4U.com ISDN U-BUS/DNIC Input/Output Transformer TEW5318 TEW5318 is designed to interface with the subscriber premises (NT) and the 2-

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www.DataSheet4U.com DFF4N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 2.5 )@VGS=10V 1. Gate { { { N-Channel MOSFET 2. Drain BVDSS = 60

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www.DataSheet4U.com DFB85N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.010Ω )@VGS=10V Low Gate Charge (Typical 96nC) Low Crss (Typical 21

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www.DataSheet4U.com DFB70N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.014Ω )@VGS=10V Low Gate Charge (Typical 70nC) Low Crss (Typical 16

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www.DataSheet4U.com DFB50N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.023 Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability

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www.DataSheet4U.com DFP50N06 N-Channel MOSFET Features RDS(on) (Max 0.022 )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedn

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www.DataSheet4U.com DFP30N06 N-Channel MOSFET Features Low RDS(on) (0.04 )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv

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www.DataSheet4U.com DCP10C60 Standard Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( I

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www.DataSheet4U.com D2P6M Sensitive Gate Silicon Controlled Rectifiers Features 1.Cathode Symbol 2. Anode BVDRM = 600V IT(RMS) = 2.0 A 3.Gate ITS

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www.DataSheet4U.com MCK100-6 Sensitive Gate Silicon Controlled Rectifiers Features 3.Gate Symbol 2. Anode BVDRM = 600V IT(RMS) = 0.8 A ITSM = 10 A

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www.DataSheet4U.com DTF8A80 UL No. E256958 Triac / Standard Gate Symbol Features Repetitive Peak Off-State Voltage : 800V R.M.S On-State Current (

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10-Watt Lednium SMD (120° Viewing Angle) OVTL09LG3x Series www.datasheet4u.com • • • • • Revolutionary 3-dimensional packaged LED source Robust ener

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