DBT151F-600 Datasheet Text
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Standard Gate Silicon Controlled Rectifiers
Features
3.Gate
Symbol
2. Anode
BVDRM = 600V IT(RMS) = 12 A ITSM = 120 A
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) Low On-State Voltage (1.5V(Typ.)@ ITM) Isolation Voltage ( VISO = 2500V AC )
1.Cathode
TO-220F
General Description
Standard gate triggering thyristor is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system.
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