DFU1N60 Datasheet | DnI

.. N-Channel MOSFET Features - - - - - N-Channel MOSFET 2.Drain BVDSS = 600V RDS(ON) = 11.5 ohm ID = 1.0A High ruggedness RDS(on) (Max 11.5 Ω )@VGS=10V Gate Charge (Typical 7n C) Improved dv/dt Capability 100% Avalanche Tested 1.Gate 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The I-PAK pkg is well suited for charger SMPS and small power inverter application. I-PAK 1 2...