DFP830 Datasheet | DnI

.. N-Channel MOSFET Features RDS(on) (Max 1.5 )@VGS=10V 1.Gate 2.Drain Gate Charge (Typical 32n C) Improved dv/dt Capability High ruggedness 100% Avalanche Tested BVDSS = 500V RDS(ON) = 1.5 ohm ID = 4.5A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast . TO-220 1...