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DFP2N60 - N-Channel MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Key Features

  • High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ { 2. Drain BVDSS = 600V.
  • ▲.
  • RDS(ON) = 5.5 ohm ID = 2.4A 3. Source { General.

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Datasheet Details

Part number DFP2N60
Manufacturer DnI
File Size 727.69 KB
Description N-Channel MOSFET
Datasheet download datasheet DFP2N60 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DFP2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ High ruggedness RDS(on) (Max 5.5 Ω )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { ◀ { 2. Drain BVDSS = 600V ● ▲ ● ● RDS(ON) = 5.5 ohm ID = 2.4A 3. Source { General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F PAK pkg is well suited for charger SMPS and small power inverter application.