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DFP630 - N-Channel MOSFET

General Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.

Key Features

  • RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 200V 1.Gate RDS(ON) = 0.4 ohm ID = 9A 3.Source General.

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Datasheet Details

Part number DFP630
Manufacturer DnI
File Size 682.65 KB
Description N-Channel MOSFET
Datasheet download datasheet DFP630 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DFP630 N-Channel MOSFET Features RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 200V 1.Gate RDS(ON) = 0.4 ohm ID = 9A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. The TO-220 pkg is well suited for DC-DC converter and SCorrection in color-monitor system.