DFP630 Datasheet | DnI

.. N-Channel MOSFET Features RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 200V 1.Gate RDS(ON) = 0.4 ohm ID = 9A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. The TO-220 pkg is well suited for DC-DC converter and SCorrection in color-monitor system. TO-220 1...