FEATURES
RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 200V 1.Gate RDS(ON) = 0.4 ohm ID = 9A 3.Source GENERAL DESCRIPTION
Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. TO-220 1 2 3 ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 200 9 5.8 36 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 180 7.8 5.5 78 0.62 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Oct, 2004.
DnI
