DIM500GCM33-TL000 - IGBT

Features

Low VCE(sat) Device.
10µs Short Circuit Withstand.
High Thermal Cycling Capability.
High Current Density Enhanced DMOS SPT.
Isolated AlSiC Base With AlN Substrates.

Dynex

Datasheet Details

Part number	DIM500GCM33-TL000
Manufacturer	Dynex
File Size	359.64 KB
Description	IGBT
Datasheet	DIM500GCM33-TL000 Datasheet
Additional preview pages of the DIM500GCM33-TL000 datasheet.

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Full PDF Text Transcription

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Replaces DS6114-1 DIM500GCM33-TL000 IGBT Chopper Module DS6114-2 January 2014 (LN31264) FEATURES  Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT  Isolated AlSiC Base With AlN Substrates APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Drives  Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM500GCM33-TL000 is a Low VCE(sat) 3300V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand.

Published: Apr 7, 2016 |