DIM800DDS12-A000 - Dual Switch IGBT Module

Features

1.
8 ±100.µ2s Short Circuit Withstand.
Non4P4un±c0h.2Through Silicon.
Isolated 5C7u B±a0s.2e with Al2O3 Substrates.
Lead Free construction KEY.

Dynex Semiconductor

Datasheet Details

Part number	DIM800DDS12-A000
Manufacturer	Dynex Semiconductor
File Size	388.57 KB
Description	Dual Switch IGBT Module
Datasheet	DIM800DDS12-A000 Datasheet
Additional preview pages of the DIM800DDS12-A000 datasheet.

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Full PDF Text Transcription

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11.5 ±0.2 14 ±0.2 Replaces DS5540-3 DIM800DDS12-A000 Dual Switch IGBT Module DS5540-4 July 2014 (LN31759) 6 ±0.2 FEATURES 18 ±100.µ2s Short Circuit Withstand  Non4P4un±c0h.2Through Silicon  Isolated 5C7u B±a0s.2e with Al2O3 Substrates  Lead Free construction KEY PARAMETERS 6 x O7 VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 28 ±0.5 1200V 2s.2crVewing depth 8m00aAx 8 1600A * Measured at the power busbars, not the auxiliary terminals AP5P5L.2IC±A0T.3IONS 11.8H5igh±0R.2eliability Inverters  Motor Controllers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.

Published: Jun 23, 2010 |