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Dynex Semiconductor

DIM800FSM17-A000 Datasheet Preview

DIM800FSM17-A000 Datasheet

Single Switch IGBT Module Preliminary Information

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Replaces May 2001, version DS5461-1.0
FEATURES
s 10µs Short Circuit Withstand
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
DIM800FSM17-A000
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DIM800FSM17-A000
Single Switch IGBT Module
Preliminary Information
DS5461-1.0 May 2001
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
800A
IC(PK)
(max)
1600A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s Inverters
s Motor Controllers
s Traction Drives
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM800FSM17-A000 is a single switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800FSM17-A000
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
Aux E
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10




Dynex Semiconductor

DIM800FSM17-A000 Datasheet Preview

DIM800FSM17-A000 Datasheet

Single Switch IGBT Module Preliminary Information

No Preview Available !

DIM800FSM17-A000
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T = 25˚C unless stated otherwise
case
Symbol
Parameter
Test Conditions
Max. Units
VCES
VGES
I
C
IC(PK)
Pmax
I2t
V
isol
QPD
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
-
Continuous collector current
Tcase = 75˚C
Peak collector current
1ms, Tcase = 105˚C
Max. transistor power dissipation T = 25˚C, T = 150˚C
case
j
Diode I2t value
VR = 0, tp = 10ms, Tvj = 125˚C
Isolation voltage - per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Partial discharge - per module
IEC1287. V1 = 1500V, V2 = 1100V, 50Hz RMS
1700 V
±20 V
800 A
1600 A
6940 W
120 kA2s
4000 V
10 pC
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com


Part Number DIM800FSM17-A000
Description Single Switch IGBT Module Preliminary Information
Maker Dynex Semiconductor
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