* s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 3300V 3.4V 1200A 2400A APPLICATIONS s s s s High Reliability Inverters C1 Motor Controllers Traction Drives Resonant Converters Aux C E
GP1200ESM33 Datasheet (150.49 KB)
GP1200ESM33
Dynex Semiconductor
150.49 KB
High reliability single switch igbt module advance information.
GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 DS5308-2.1 February 200.
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