Download the TA329xxQ datasheet PDF.
This datasheet also covers the TA32910Q variant, as both devices belong to the same asymmetric thyristor family and are provided as variant models within a single manufacturer datasheet.
Key Features
s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assisted Turn-off With Exclusive Bypass Diode s Fully Characterised For Operation up to 40kHz s Directly Compatible With 220-480 A. c. Mains.
Full PDF Text Transcription for TA329xxQ (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
TA329xxQ. For precise diagrams, and layout, please refer to the original PDF.
TA329..Q TA329..Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 APPLICATIONS s High Frequency Applications s Hi...
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S4680-3.0 January 2000 APPLICATIONS s High Frequency Applications s High Power Choppers And Inverters s Welding s Ultrasonic Generators s Induction Heating s 400Hz UPS KEY PARAMETERS VDRM 1400V IT(RMS) 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs www.DataSheet4U.com s PWM Inverters FEATURES s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assisted Turn-off With Exclusive Bypass Diode s Fully Characterised For Operation up to 40kHz s Directly Compatible With 220-480 A.c.
TA329xxQ Datasheet
