TV3010K Datasheet | Dynex Semiconductor

FEATURES s High Surge Capability VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 2000 1400 1000 600 Conditions TV30 20 M or K(R) TV30 14 M or K(R) TV30 10 M or K(R) TV30 06 M or K(R) VRSM = VRRM + 100V Lower voltage grades available. M for M16 thread. K for 3/4" - 16UNF thread, R for reverse polarity. Outline type code: DO9 See Package Details for further information. CURRENT RATINGS Symbol Single Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100o C Tcase = 100o C Tcase = 100o C 335 525 440 A A A Parameter Conditions Max. Units 1/7 TV30 SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 175o C VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase =175o C VR = 0 Max. 4.8 115 x 106 6.0 180 x 103 Units k A A2s k A A2s THERMAL AND MECHANICAL DATA Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink dc Mounting torque 35.0Nm with mounting pound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Mounting Torque -55 30.0 175 200 35.0 o Conditions Min. - Max. 0.13 0.06 175 Units o C/W o C/W o C C o Nm CHARACTERISTICS Symbol VFM IRRM QS IRM trr VTO r T Parameter Forward voltage Peak reverse current Total stored charge Peak recovery current reverse recovery time Threshold voltage Slope resistance At Tvj = 175˚C At Tvj = 175˚C IF = 200A, d IRR/dt = 20A/µs, Tcase = 25˚C Conditions At 1000A peak, Tcase = 25o C At VRRM, Tcase = 175o C Typ. 300- 90- 6.5- Max. 1.4 20 0.8 0.6 Units V m A µC A µs V mΩ - Typical values. 2/7 TV30 CURVES 3/7 TV30 4/7 TV30 5/7 TV30...