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XTR2N0800 - 80V N-Channel Power MOSFET

Description

XTR2N0800 is a family of N-channel power MOSFETs designed to reliably operate over a wide range of temperatures.

Full functionality is guaranteed from -60°C to +230°C, though operation well below and above this temperature range is achieved.

Features

  • Minimum BVDSS = 90V.
  • Allowed VGS range.
  • 5.5V to +5.5V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Low RDS(on) o XTR2N0825: 1.54Ω @ 230°C o XTR2N0850: 0.70Ω @ 230°C.
  • Maximum ID: o XTR2N0825: 3.4A @ 230°C o XTR2N0850: 7.4A @ 230°C.
  • On-time (td(on)+tr): o XTR2N0825: 16nsec @ 230°C o XTR2N0850: 19nsec @ 230°C.
  • Off-time (td(off)+tf): o XTR2N0825: 31nsec @ 230°C o XTR2N0850: 38nsec @ 230°C.
  • Ruggedized 3-.

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Datasheet preview – XTR2N0800

Datasheet Details

Part number XTR2N0800
Manufacturer EASii
File Size 1.04 MB
Description 80V N-Channel Power MOSFET
Datasheet download datasheet XTR2N0800 Datasheet
Additional preview pages of the XTR2N0800 datasheet.

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Full PDF Text Transcription

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XTR2N0800 High Temperature, 80V N-Channel Power MOSFET Data Sheet Rev 4 – November 2023 (DS-00113-11) PRODUCTION XTRPPPPP YYWWANN CDIP8 XTR2N0825 XTRPPPPP YYWWANN CDFP8 XTR2N0825 XTRPPPPP YYWWANN TO257-3 XTR2N0850 FEATURES • Minimum BVDSS = 90V. • Allowed VGS range –5.5V to +5.5V. • Operational beyond the -60°C to +230°C temperature range. • Low RDS(on) o XTR2N0825: 1.54Ω @ 230°C o XTR2N0850: 0.70Ω @ 230°C • Maximum ID: o XTR2N0825: 3.4A @ 230°C o XTR2N0850: 7.4A @ 230°C • On-time (td(on)+tr): o XTR2N0825: 16nsec @ 230°C o XTR2N0850: 19nsec @ 230°C • Off-time (td(off)+tf): o XTR2N0825: 31nsec @ 230°C o XTR2N0850: 38nsec @ 230°C • Ruggedized 3-lead TO257, 8-lead side brazed DIP and 8-lead gullwing flat pack with ePAD. • Also available as bare die.
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