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EIC discrete Semiconductors

2W005 Datasheet Preview

2W005 Datasheet

SILICON BRIDGE RECTIFIERS

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2W005 - 2W10
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
0.22 (5.59)
0.18 (4.57)
WOB
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL 2W005 2W01 2W02 2W04 2W06 2W08 2W10 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
VRRM
VRMS
VDC
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
0.375" (9.5 mm) lead length Tc = 25°C
Peak Forward Surge Current Single half sine wave
IF(AV)
2.0 Amps.
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
IFSM
I2t
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
50
10
1.0
10
1.0
24
36
- 50 to + 150
- 50 to + 150
Amps.
A2S
Volts
µA
mA
pf
°C/W
°C
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board w ith, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
UPDATE : APRIL 23,1998




EIC discrete Semiconductors

2W005 Datasheet Preview

2W005 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( 2W005 - 2W10 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.0
PC Board
1.6 0.375(9.5mm)
Copper Pads
1.2 0.22" x 0.22" (5.5 x5.5mm)
0.8
0.4
60 Hz, Resistive or Inductive load.
0 0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
40
TJ = 55 °C
30
20
SINGLE HALF SINE WAVE
10 (JEDEC METHOD)
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1 1.0
0.1 TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
0.1 TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)


Part Number 2W005
Description SILICON BRIDGE RECTIFIERS
Maker EIC discrete Semiconductors
Total Page 2 Pages
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