SILICON Datasheet | Pinout, Features, Price Comparison & PDF

isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

MRA4001 - MRA4007 SURFACE MOUNT SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features Diffused junction For surface mounted

SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For mediu

PRELIMINARY VERSION nly R820T O High Performance Low Power Advanced Digital TV Silicon Tuner Datasheet orSuite 808, Building 53, No.195, Sec.4, Chung

74HC595D Features ● 8-bit serial input ● 8-bit serial or parallel output ● Tri-state output register ● Shift register with direct clear ● Shift outpu

2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

BU508AF BU508AF TV Horizontal Output Applications 1 TO-3PF 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Ma

PN2222 PN2222 General Purpose Transistor NPN Epitaxial Silicon Transistor 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25

DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The

6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications TV VHF Mixer Applications 2SC2347 Unit: mm Maximum Ratin

DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM

ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three grou