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EIC discrete Semiconductors

RM11B Datasheet Preview

RM11B Datasheet

SILICON RECTIFIER DIODES

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RM11A - RM11C
PRV : 600 - 1000 Volts
Io : 1.2 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
SILICON RECTIFIER DIODES
D2
0.161 (4.10)
0.154 (3.90)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.20)
0.268 (6.84)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
RM11A
600
420
600
RM11B
800
560
800
1.2
100
0.92
10
50
30
50
- 65 to + 175
- 65 to + 175
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
RM11C
1000
700
1000
UNITS
V
V
V
A
A
V
µA
µA
pF
°C/W
°C
°C
Page 1 of 2
Rev. 01 : Mar 23, 2002




EIC discrete Semiconductors

RM11B Datasheet Preview

RM11B Datasheet

SILICON RECTIFIER DIODES

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( RM11A - RM11C )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.5
1.2
0.9
0.6
0.3
RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
8.3 ms SINGLE HALF SINE WAVE
80
60
Ta = 50 °C
40
20
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
10
1.0
Pulse W idth = 300 µs
2% Duty Cycle
0.1
TJ = 25 °C
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01
0 20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 01 : Mar 23, 2002


Part Number RM11B
Description SILICON RECTIFIER DIODES
Maker EIC discrete Semiconductors
Total Page 2 Pages
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