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EIC discrete Semiconductors

WL10 Datasheet Preview

WL10 Datasheet

SILICON BRIDGE RECTIFIERS

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WL005 - WL10
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
WOB
0.22 (5.59)
0.18 (4.57)
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375" (9.5 mm) lead length Tc = 50°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL WL005 WL01
VRRM
50 100
VRMS
VDC
35 70
50 100
WL02
200
140
200
WL04
400
280
400
WL06
600
420
600
WL08
800
560
800
WL10
1000
700
1000
UNIT
Volts
Volts
Volts
IF(AV)
1.0 Amps.
IFSM
I2t
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
30
10
1.2
10
1.0
24
36
- 50 to + 150
- 50 to + 150
Amps.
A2S
Volts
µA
mA
pf
°C/W
°C
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.
UPDATE : APRIL 23,1998




EIC discrete Semiconductors

WL10 Datasheet Preview

WL10 Datasheet

SILICON BRIDGE RECTIFIERS

No Preview Available !

RATING AND CHARACTERISTIC CURVES ( WL005 - WL10 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
PC Board
0.375
0.8
Copper Pads
0.6 0.22" x 0.22"
(5.5 x5.5mm)
0.4
0.2
60 Hz, Resistive or Inductive load.
0 0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
24
TJ = 55 °C
18
12
SINGLE HALF SINE WAVE
6 (JEDEC METHOD)
01 2
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1
TJ = 25 °C
0.1
Pulse Width = 300 µs
1 % Duty Cycle
1.0
0.1 TJ = 25 °C
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE, VOLTS
1.8
0.01
0 20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)


Part Number WL10
Description SILICON BRIDGE RECTIFIERS
Maker EIC discrete Semiconductors
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WL10 Datasheet PDF






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