EPC2112 - Integrated Gate Driver eGaN

EPC

EPC2112 Datasheet Preview — Preview of EPC2112 PDF

Datasheet Details

Part number	EPC2112
Manufacturer	EPC
File Size	498.58 KB
Description	Integrated Gate Driver eGaN
Datasheet	EPC2112-EPC.pdf

EPC2112 Product details

Description

The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA.

Features

Integrated Gate Driver.
Low Propagation Delay.
Up to 7 MHz Operation.
Operates from 5 V Supply.
200 V, 40-mΩ eGaN FET.
Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm.

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Other Datasheets by EPC

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Published: May 27, 2019 |