EPC2112 Description
The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA. The EPC2112 monolithic IC enables designers to improve efficiency, save space, and lower costs pared to silicon-based solutions. The ultra-low capacitance and zero reverse recovery of the eGaN FET enables...
EPC2112 Key Features
- Integrated Gate Driver
- Low Propagation Delay
- Up to 7 MHz Operation
- Operates from 5 V Supply
- 200 V, 40-mΩ eGaN FET
- Low Inductance 2.9 mm x 1.1 mm BGA