Datasheet Details
| Part number | EPC2115 |
|---|---|
| Manufacturer | EPC |
| File Size | 734.78 KB |
| Description | Integrated Gate Driver eGaN |
| Download | EPC2115 Download (PDF) |
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Overview: EPC2115 – Dual 150 V, 5 A Integrated Gate Drivers eGaN® IC Preliminary.
| Part number | EPC2115 |
|---|---|
| Manufacturer | EPC |
| File Size | 734.78 KB |
| Description | Integrated Gate Driver eGaN |
| Download | EPC2115 Download (PDF) |
|
|
|
The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package.
The EPC2115 enables designers to improve efficiency, save space, and lower costs compared to silicon-based solutions.
The ultra-low capacitance and zero reverse recovery of the eGaN FETs enable efficient operation in many topologies.
| Part Number | Description |
|---|---|
| EPC2111 | Enhancement-Mode GaN Power Transistor Half-Bridge |
| EPC2112 | Integrated Gate Driver eGaN |
| EPC2001 | Power Transistor |
| EPC2001C | Power Transistor |
| EPC2007 | Power Transistor |
| EPC2010 | Power Transistor |
| EPC2010C | Power Transistor |
| EPC2012 | Power Transistor |
| EPC2012C | Power Transistor |
| EPC2014 | Power Transistor |