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EPC2115 – Dual 150 V, 5 A Integrated Gate Drivers eGaN® IC
Preliminary Datasheet
FEATURES:
• Integrated Gate Driver – Low Propagation Delay – Up to 7 MHz Operation – Operates from 5 V Supply
• Dual 88-mΩ, 150-V eGaN FET • Low Inductance 2.9 mm x 1.1 mm BGA
EPC2115 devices are supplied only in passivated die form with solder balls
Die Size: 2.9 mm x 1.1 mm
APPLICATIONS: • Wireless Power (Highly Resonant and Inductive) • High Frequency DC-DC Conversion
Schematic Diagram
DESCRIPTION
The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package.
EPC2115 Datasheet
