EPC2115 - Integrated Gate Driver eGaN

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EPC

EPC2115 Integrated Gate Driver eGaN by EPC - Datasheet Preview — Datasheet preview – EPC2115

Datasheet Details

Part number	EPC2115
Manufacturer	EPC
File Size	734.78 KB
Description	Integrated Gate Driver eGaN
Datasheet	EPC2115 Datasheet
Additional preview pages of the EPC2115 datasheet.

Product details

Description

The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package.

Features

Integrated Gate Driver.
Low Propagation Delay.
Up to 7 MHz Operation.
Operates from 5 V Supply.
Dual 88-mΩ, 150-V eGaN FET.
Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm.

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Other Datasheets by EPC

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Published: May 27, 2019 |