EPC2115
Description
The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package. The EPC2115 enables designers to improve efficiency, save space, and lower costs compared to silicon-based solutions.
Key Features
- Integrated Gate Driver - Low Propagation Delay - Up to 7 MHz Operation - Operates from 5 V Supply
- Dual 88-mΩ, 150-V eGaN FET
- Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm
