EPC EPC2115
The EPC2115 enhancement-mode gallium-nitride (eGaN®) monolithic IC contains two monolithic 88-mΩ, 150-V GaN power transistors, each with an optimized gate driver, in a low inductance 2.9 mm by 1.1 mm BGA package. The EPC2115 enables designers to improve efficiency, save space, and lower costs compared to silicon-based solutions. The ultra-low capacitance and zero reverse recovery of the eGaN FETs enable efficient operation in many topologies.| Part No. | EPC2115 |
|---|---|
| Datasheet | EPC2115 Download |
| Manufacturer |  EPC |
| Description | Integrated Gate Driver eGaN |
| Buy | Stock & Price |
FEATURES
:● Integrated Gate Driver – Low Propagation Delay – Up to 7 MHz Operation – Operates from 5 V Supply
● Dual 88-mΩ, 150-V eGaN FET
● Low Inductance 2.9 mm x 1.1 mm BGA EPC2115 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm
APPLICATIONS
:● Wireless Power (Highly Resonant and Inductive)
● High Frequency DC-DC Conversion Schematic Diagram
DESCRIPTION
The integrated drivers are specifically m
