EPC2112 - Integrated Gate Driver eGaN

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EPC

EPC2112 Integrated Gate Driver eGaN by EPC - Datasheet Preview — Datasheet preview – EPC2112

Datasheet Details

Part number	EPC2112
Manufacturer	EPC
File Size	498.58 KB
Description	Integrated Gate Driver eGaN
Datasheet	EPC2112 Datasheet
Additional preview pages of the EPC2112 datasheet.

Product details

Description

The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA.

Features

Integrated Gate Driver.
Low Propagation Delay.
Up to 7 MHz Operation.
Operates from 5 V Supply.
200 V, 40-mΩ eGaN FET.
Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm.

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Other Datasheets by EPC

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Published: May 27, 2019 |