EPC EPC2112
The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA. The EPC2112 monolithic IC enables designers to improve efficiency, save space, and lower costs compared to silicon-based solutions. The ultra-low capacitance and zero reverse recovery of the eGaN FET enables efficient operation in many topologies.| Part No. | EPC2112 |
|---|---|
| Datasheet | EPC2112 Download |
| Manufacturer |  EPC |
| Description | Integrated Gate Driver eGaN |
| Buy | Stock & Price |
FEATURES
:● Integrated Gate Driver – Low Propagation Delay – Up to 7 MHz Operation – Operates from 5 V Supply
● 200 V, 40-mΩ eGaN FET
● Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm
APPLICATIONS
:● Wireless Power (Highly Resonant and Inductive)
● High Frequency DC-DC Conversion Schematic Diagram
DESCRIPTION
The integrated driver is specifica
