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EPC2112 - Integrated Gate Driver eGaN

General Description

The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA.

Key Features

  • Integrated Gate Driver.
  • Low Propagation Delay.
  • Up to 7 MHz Operation.
  • Operates from 5 V Supply.
  • 200 V, 40-mΩ eGaN FET.
  • Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm.

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Datasheet Details

Part number EPC2112
Manufacturer EPC
File Size 498.58 KB
Description Integrated Gate Driver eGaN
Datasheet download datasheet EPC2112 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN® IC Preliminary Datasheet FEATURES: • Integrated Gate Driver – Low Propagation Delay – Up to 7 MHz Operation – Operates from 5 V Supply • 200 V, 40-mΩ eGaN FET • Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm APPLICATIONS: • Wireless Power (Highly Resonant and Inductive) • High Frequency DC-DC Conversion Schematic Diagram DESCRIPTION The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA.