Datasheet4U Logo Datasheet4U.com

EPC2112 Datasheet Integrated Gate Driver Egan

Manufacturer: EPC

Overview: EPC2112 – 200 V, 10 A Integrated Gate Driver eGaN® IC Preliminary.

Datasheet Details

Part number EPC2112
Manufacturer EPC
File Size 498.58 KB
Description Integrated Gate Driver eGaN
Datasheet EPC2112-EPC.pdf

General Description

The EPC2112 enhancement-mode gallium-nitride (eGaN®) integrated driver and FET consists of a 40-mΩ, 200 V eGaN power transistor and an optimized gate driver in a low inductance 2.9 mm by 1.1 mm surfacemount BGA.

The EPC2112 monolithic IC enables designers to improve efficiency, save space, and lower costs pared to silicon-based solutions.

The ultra-low capacitance and zero reverse recovery of the eGaN FET enables efficient operation in many topologies.

Key Features

  • Integrated Gate Driver.
  • Low Propagation Delay.
  • Up to 7 MHz Operation.
  • Operates from 5 V Supply.
  • 200 V, 40-mΩ eGaN FET.
  • Low Inductance 2.9 mm x 1.1 mm BGA EPC2112 devices are supplied only in passivated die form with solder balls Die Size: 2.9 mm x 1.1 mm.

More Datasheets from EPC

Part Number Description
EPC2111 Enhancement-Mode GaN Power Transistor Half-Bridge
EPC2115 Integrated Gate Driver eGaN
EPC2001 Power Transistor
EPC2001C Power Transistor
EPC2007 Power Transistor
EPC2010 Power Transistor
EPC2010C Power Transistor
EPC2012 Power Transistor
EPC2012C Power Transistor
EPC2014 Power Transistor

EPC2112 Distributor