eGaN® FET DATASHEET
EPC8004 – Enhancement Mode Power Transistor
VDS , 40 V
RDS(on) , 110 mΩ
ID , 4 A
D
G
S
EPC8004
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very
low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG
and zero QRR. The end result is a device that can handle tasks where very high switching frequency,
and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings
PARAMETER
VALUE UNIT
Drain-to-Source Voltage (Continuous)
40
VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 125°C)
48
V
ID
Continuous (TA = 25°C, RθJA = 39°C/W)
Pulsed (25°C, TPULSE = 300 µs)
Gate-to-Source Voltage
VGS Gate-to-Source Voltage
4
A
7.5
6
V
–4
TJ Operating Temperature
TSTG Storage Temperature
–40 to 150
°C
–40 to 150
Thermal Characteristics
PARAMETER
TYP
UNIT
RθJC
Thermal Resistance, Junction-to-Case
8.2
RθJB
Thermal Resistance, Junction-to-Board
16
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
82
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details
PARAMETER
Static Characteristics (TJ= 25°C unless otherwise stated)
TEST CONDITIONS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 125 µA
IDSS
Drain-Source Leakage
VDS = 32 V, VGS = 0 V
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
VGS = 5 V
VGS = -4 V
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 0.25 mA
RDS(on)
Drain-Source On Resistance
VGS = 5 V, ID = 0.5 A
VSD
Source-Drain Forward Voltage
Specifications are with substrate connected to source where applicable.
IS = 0.5 A, VGS = 0 V
EPC8004 eGaN FETs are supplied only in
passivated die form with solder bars
Die Size: 2.1 mm x 0.85 mm
Applications
• Ultra High Speed DC-DC Conversion
• RF Envelope Tracking
• Wireless Power Transfer
• Game Console and Industrial Movement
Sensing (Lidar)
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
MIN TYP MAX UNIT
40
V
50
100
µA
100 500
µA
50
100
0.8 1.4
2.5
V
80
110
mΩ
2.2
V
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
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