EPC8004 Datasheet - EPC

EPC8004 Power Transistor

eGaN® FET DATASHEET EPC8004 Enhancement Mode Power Transistor VDS , 40 V RDS(on) , 110 mΩ ID , 4 A D G S EPC8004 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well.

EPC8004-EPC.pdf