Datasheet4U.com - F59L1G81MB

F59L1G81MB Datasheet, ESMT

F59L1G81MB Datasheet, ESMT

Page 1 of F59L1G81MB Page 2 of F59L1G81MB Page 3 of F59L1G81MB

F59L1G81MB memory equivalent

  • 1 gbit (128m x 8) 3.3v nand flash memory.
  • Preview is limited to up to three pages.

F59L1G81MB memory equivalent

1 gbit (128m x 8) 3.3v nand flash memory

Datasheet Preview: F59L1G81MB 📥 Download PDF (2.01MB)

PDF file info

PDF file info

Part number: F59L1G81MB

Manufacturer: ESMT

File Size: 2.01MB

Download: 📄 Datasheet

Description: 1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L1G81MB Features and benefits

F59L1G81MB Features and benefits


* Voltage Supply: 3.3V (2.7V~3.6V)
* Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Pa.

F59L1G81MB Description

F59L1G81MB Description

The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be eras.

Image gallery

Page 1 of F59L1G81MB Page 2 of F59L1G81MB Page 3 of F59L1G81MB

TAGS

F59L1G81MB
Gbit
128M
3.3V
NAND
Flash
Memory
ESMT

📁 Related Datasheet

F59L1G81MA-25BCG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25BCIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

F59L1G81MA-25BG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25BIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

F59L1G81MA-25TG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic .

F59L1G81MA-25TIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Auto.

F59L1G81MB-25BCG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81MB-25BG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81MB-25BUG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

F59L1G81MB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Auto.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts