| Title | |
| Description | The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting i... |
| Features |
Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/... |
| Datasheet |
 F59L1G81MB Datasheet - 2.01MB |
| Distributor |
|
| Stock | In stock |
| Price | |
| BuyNow |
 - Manufacturer a
|
| Distributor | Stock | Price | BuyNow |
|---|
