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F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

General Description

Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity.

The device is offered in 3.3V VCC.

Its NAND cell provides the most cost effective solution for the solid state mass storage market.

Key Features

  • z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 200us (Typ. ) - Block Erase time: 1.5ms (Typ. ) z Command/Address/Data Multiplexed I/O Port z Hardware Data P.

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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory
F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L512M81A 512Mbit (64M x 8) 3.3V NAND Flash Memory
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 200us (Typ.) - Block Erase time: 1.5ms (Typ.