F59L1G81A
F59L1G81A is 1 Gbit (128M x 8) 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
ESMT
Flash
Features z Voltage Supply: 2.6V ~ 3.6V z Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit z Automatic Program and Erase
- Page Program: (2K + 64) bytes
- Block Erase: (128K + 4K) bytes z Page Read Operation
- Page Size: (2K + 64) bytes
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time
- Program time: 200us (Typ.)
- Block Erase time: 1.5ms (Typ.) z mand/Address/Data Multiplexed I/O Port z Hardware Data Protection
- Program/Erase Lockout During Power Transitions z Reliable CMOS Floating Gate Technology z Endurance:
- 100K Program/Erase Cycles (with 1 bit/528 bytes ECC)
- Data...
