F59L1G81MB-25BCG2M
F59L1G81MB-25BCG2M is 1 Gbit (128M x 8) 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the F59L1G81MB-25TG2M comparator family.
- Part of the F59L1G81MB-25TG2M comparator family.
FEATURES
- Voltage Supply: 3.3V (2.7V~3.6V)
- Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- Page Read Operation
- Page Size: (2K + 64) Byte
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.) (3.3V)
- Memory Cell: 1bit/Memory Cell
- Fast Write Cycle Time
- Program time: 300us
- typical
- Block Erase time: 4ms
- typical
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
F59L1G81MB (2M)
1 Gbit (128M x 8) 3.3V NAND Flash Memory
- Reliable CMOS Floating Gate Technology
- ECC Requirement:
- 4bit/528Byte
- Endurance: 100K Program/Erase cycles
- Data Retention: 10 years
- mand Register Operation
- Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
- NOP: 4 cycles
- Cache Program Operation for High Performance Program
- Cache Read Operation
- Copy-Back Operation
- EDO mode
- OTP Operation
- Bad-Block-Protect
- Operating...
