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F59L1G81MB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Datasheet Summary

Description

The device is a 128Mx8bit with spare 4Mx8bit capacity.

The device is offered in 3.3V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage Supply: 3.3V (2.7V~3.6V).
  • Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
  • Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) (3.3V).
  • Memory Cell: 1bit/Memory Cell.
  • Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 4ms - typical.
  • Command/Address/Da.

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Datasheet Details

Part number F59L1G81MB-25TG2M
Manufacturer ESMT
File Size 2.01 MB
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet download datasheet F59L1G81MB-25TG2M Datasheet
Additional preview pages of the F59L1G81MB-25TG2M datasheet.

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Full PDF Text Transcription

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ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V~3.6V)  Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.
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