F59L1G81MB - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Product Overview

ESMT

Part number	F59L1G81MB
Manufacturer	ESMT
File Size	2.01 MB
Description	1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet	F59L1G81MB Datasheet
Note	This datasheet PDF includes multiple part numbers: F59L1G81MB, F59L1G81MB-25TG2M. Please refer to the document for exact specifications by model.
Additional preview pages of the F59L1G81MB datasheet.

The device is a 128Mx8bit with spare 4Mx8bit capacity.

Voltage Supply: 3.3V (2.7V~3.6V).
Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) (3.3V).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 4ms - typical.
Command/Address/Da.

📁 Similar Datasheet

F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59L2G81A - 2 Gbit (256M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59L512M81A - 512Mbit (64M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D2G161A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
F59D2G81A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

Other Datasheets by ESMT

F59L1G81MB-25BCG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MB-25BG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MB-25BUG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Published: Apr 3, 2024 |