Datasheet4U Logo Datasheet4U.com

F59L4G81KA Datasheet 4-gbit 3.3v Nand Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Flash.

General Description

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

The device is a memory device which utilizes the I/O pins for both address and data input/output as well as command inputs.

Key Features

  • Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V).
  • Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block Size: 64Pages = (256K + 16K) bytes ­ Number of Planes: 1 ­ Number of Block per Die (LUN)= 2048.
  • Automatic Program and Erase ­ Page Program: (4K + 256) bytes ­ Block Erase: (256K + 16K) bytes.
  • Page Read Operation ­ Random Read: 25us (Max. ) ­ Read Cycle: 25ns.
  • Write Cycle Time ­ Page Program Time: 400us (Typ. ) 700us (Max. ) ­ Block Erase Time: 3.5.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Elite Semiconductor Logo F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory Elite Semiconductor

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L4G81CA-25BG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L4G81CA-25TG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L4G81XB 3.3V NAND Flash Memory
F59L1G81LA 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25BCG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25BG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25TG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BCIG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L4G81KA Distributor