F59L4G81A Overview
The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
F59L4G81A Key Features
- Voltage Supply: 3.3V (2.7V ~ 3.6V)
- Organization
- Memory Cell Array: (512M + 16M) x 8bit
- Data Register: (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program: (2K + 64) bytes
- Block Erase: (128K + 4K) bytes
- Page Read Operation
- Page Size: (2K + 64) bytes
- Random Read: 25us (Max.)
