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F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory

General Description

The device is a 512Mx8bit with spare 16Mx8bit capacity.

The device is offered in 3.3V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply: 3.3V (2.7V ~ 3.6V).
  • Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes.
  • Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ).
  • Memory Cell: 1bit/Memory Cell.
  • Fast Write Cycle Time - Program time: 350us (Typ. ) - Block Erase time: 3.5ms (Typ. ).
  • Command/Address/Data Mu.

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📁 Similar Datasheet

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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L1G81A 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory
F59L512M81A 512Mbit (64M x 8) 3.3V NAND Flash Memory
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Flash FEATURES  Voltage Supply: 3.3V (2.7V ~ 3.6V)  Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes  Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.) - Serial Access: 25ns (Min.)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 350us (Typ.) - Block Erase time: 3.5ms (Typ.)  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L4G81A 4 Gbit (512M x 8) 3.