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F59L4G81CA-25BG2L - 4 Gbit (512M x 8) 3.3V NAND Flash Memory

Download the F59L4G81CA-25BG2L datasheet PDF. This datasheet also covers the F59L4G81CA-25TG2L variant, as both devices belong to the same 4 gbit (512m x 8) 3.3v nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Organization.
  • Memory cell array 4352 × 128K × 8.
  • Register 4352 × 8.
  • Page size 4352 bytes.
  • Block size (256K + 16K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
  • Mode control.
  • Serial input/output.
  • Command control.
  • Number of valid blocks.
  • Min 2008 blocks.
  • Max 2048 blocks F59L4G81CA (2L) 4 Gbit.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F59L4G81CA-25TG2L-ESMT.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory Elite Semiconductor
F59L1G81A 1 Gbit (128M x 8) 3.3V NAND Flash Memory Elite Semiconductor
F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory Elite Semiconductor
F59L512M81A 512Mbit (64M x 8) 3.3V NAND Flash Memory Elite Semiconductor
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory Elite Semiconductor

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L4G81CA-25TG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L4G81KA 4-Gbit 3.3V NAND Flash Memory
F59L4G81XB 3.3V NAND Flash Memory
F59L1G81LA 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Flash FEATURES  Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes  Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read  Mode control – Serial input/output – Command control  Number of valid blocks – Min 2008 blocks – Max 2048 blocks F59L4G81CA (2L) 4 Gbit (512M x 8) 3.3V NAND Flash Memory  Power supply VCC = 2.7V to 3.6V  Access time – Cell array to register 25 μs max – Serial Read Cycle 25 ns min (CL=50pF)  Program/Erase time – Auto Page Program 300 μs/page typ. – Auto Block Erase 2.5 ms/block typ.  Operating current – Read (25 ns cycle) 30 mA max. – Program (avg.) 30 mA max – Erase (avg.