F59L4G81CA-25TG2L Overview
Key Features
- Organization – Memory cell array 4352 × 128K × 8 – Register 4352 × 8 – Page size 4352 bytes – Block size (256K + 16K) bytes
- Number of valid blocks – Min 2008 blocks – Max 2048 blocks F59L4G81CA (2L) 4 Gbit (512M x
- 3.3V NAND Flash Memory
- Power supply VCC = 2.7V to 3.6V
- Access time – Cell array to register 25 μs max – Serial Read Cycle 25 ns min (CL=50pF)
- Program/Erase time – Auto Page Program 300 μs/page typ. – Auto Block Erase 2.5 ms/block typ
- Operating current – Read (25 ns cycle) 30 mA max. – Program (avg.) 30 mA max – Erase (avg.) 30 mA max – Standby 50 μA max
- 8 bit ECC for each 512Byte is required
