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F59L4G81KA - 4-Gbit 3.3V NAND Flash Memory

General Description

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

Key Features

  • Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V).
  • Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block Size: 64Pages = (256K + 16K) bytes ­ Number of Planes: 1 ­ Number of Block per Die (LUN)= 2048.
  • Automatic Program and Erase ­ Page Program: (4K + 256) bytes ­ Block Erase: (256K + 16K) bytes.
  • Page Read Operation ­ Random Read: 25us (Max. ) ­ Read Cycle: 25ns.
  • Write Cycle Time ­ Page Program Time: 400us (Typ. ) 700us (Max. ) ­ Block Erase Time: 3.5.

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📁 Similar Datasheet

Part Number Description Manufacturer
F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory Elite Semiconductor
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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L4G81CA-25BG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L4G81CA-25TG2L 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59L4G81XB 3.3V NAND Flash Memory
F59L1G81LA 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Flash FEATURES  Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V)  Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block Size: 64Pages = (256K + 16K) bytes ­ Number of Planes: 1 ­ Number of Block per Die (LUN)= 2048  Automatic Program and Erase ­ Page Program: (4K + 256) bytes ­ Block Erase: (256K + 16K) bytes  Page Read Operation ­ Random Read: 25us (Max.) ­ Read Cycle: 25ns  Write Cycle Time ­ Page Program Time: 400us (Typ.) 700us (Max.) ­ Block Erase Time: 3.5 ms (Typ.) 10ms (Max.) F59L4G81KA (2R) Operation Temperature Condition -40°C~105°C 4 Gbit (512M x 8) 3.